Transistor Type:
PNP
Dimensions:
11.04 x 7.74 x 2.66mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
300 V
Maximum Emitter Base Voltage:
3 V
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
14 Weeks
Base Part Number:
MJE350
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 500mA 20W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 10V
Transistor Type:
PNP
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
500mA
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
