Transistor Type:
NPN
Dimensions:
38.86 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204
Number of Elements per Chip:
1
Maximum DC Collector Current:
60 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
24 Weeks
Base Part Number:
MJ14002
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 50A, 3V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 12A, 60A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
300W
Customer Reference:
Package / Case:
TO-204AE
Current - Collector (Ic) (Max):
60A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
