Transistor Type:
NPN
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Saturation Voltage:
0.8 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
90 V
Maximum Base Emitter Saturation Voltage:
1.3 V
Maximum Emitter Base Voltage:
4 V
Package Type:
TO-204AA
Number of Elements per Chip:
1
Maximum DC Collector Current:
30 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
46 Weeks
Base Part Number:
MJ802
Detailed Description:
Bipolar (BJT) Transistor NPN 90V 30A 2MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 7.5A, 2V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
800mV @ 750mA, 7.5A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
90V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
30A
Current - Collector Cutoff (Max):
1mA (ICBO)
Manufacturer:
ON Semiconductor
