ON Semiconductor NSS12200WT1G
Product Information
Base Part Number:
NSS12200
Detailed Description:
Bipolar (BJT) Transistor PNP 12V 2A 100MHz 450mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 800mA, 1.5 V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
290mV @ 20mA, 1A
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
450mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship NSS12200WT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSS12200WT1G. Base Part Number: nss12200. It features bipolar (bjt) transistor pnp 12v 2a 100mhz 450mw surface mount sc-88/sc70-6/sot-363. Furthermore, 100 @ 800ma, 1.5 v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 290mv @ 20ma, 1a is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 12v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 450mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 2a. In addition, 100na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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