ON Semiconductor BD679AG
Product Information
Minimum DC Current Gain:
750
Transistor Type:
NPN
Dimensions:
7.74 x 2.66 x 11.04mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Collector Cut-off Current:
0.2mA
Height:
11.04mm
Width:
2.66mm
Length:
7.74mm
Package Type:
TO-225
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
2.8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
17 Weeks
Base Part Number:
BD679
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.8V @ 40mA, 2A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11462415 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11462415.
Yes. We ship BD679AG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BD679AG. It features up to 750 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 7.74 x 2.66 x 11.04mm. The product is available in through hole configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 4 a continuous collector current . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It has a maximum 0.2ma collector cut-off current . In addition, the height is 11.04mm. Furthermore, the product is 2.66mm wide. Its accurate length is 7.74mm. The package is a sort of to-225. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 2.8 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 17 weeks of manufacturer standard lead time. Base Part Number: bd679. It features bipolar (bjt) transistor npn - darlington 80v 4a 40w through hole to-225aa. Furthermore, 750 @ 2a, 3v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The 2.8v @ 40ma, 2a is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 4a. In addition, 500µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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