ON Semiconductor 2N6052G
Product Information
Dimensions:
39.37 x 26.67 x 8.51mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
1mA
Width:
26.67mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
12 A
Package Type:
TO-204
Number of Elements per Chip:
1
Maximum Operating Temperature:
+200 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
39.37mm
Pin Count:
2
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Emitter Voltage:
100 V
Height:
8.51mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
24 Weeks
Base Part Number:
2N6052
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 6A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 120mA, 12A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
150W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
12A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship 2N6052G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N6052G. The given dimensions of the product include 39.37 x 26.67 x 8.51mm. The product has a maximum 3 v collector emitter saturation voltage . It has a maximum 1ma collector cut-off current . Furthermore, the product is 26.67mm wide. The product offers single transistor configuration. The product has a maximum 12 a continuous collector current . The package is a sort of to-204. It consists of 1 elements per chip. It has a maximum operating temperature of +200 °c. The transistor is a pnp type. Additionally, it has 100 v maximum collector base voltage. In addition, the product has a maximum 4 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 39.37mm. It contains 2 pins. It features up to 100 of minimum DC current gain. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. Whereas features a 100 v of collector emitter voltage (max). In addition, the height is 8.51mm. Whereas, the minimum operating temperature of the product is -65 °c. It has typical 24 weeks of manufacturer standard lead time. Base Part Number: 2n6052. It features bipolar (bjt) transistor pnp - darlington 100v 12a 150w through hole to-204 (to-3). Furthermore, 750 @ 6a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The 3v @ 120ma, 12a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 150w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 12a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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