Minimum DC Current Gain:
50
Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
3.5 V
Maximum Collector Cut-off Current:
5mA
Height:
15.75mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Emitter Base Voltage:
8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
11 Weeks
Base Part Number:
MJE5742
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 400V 8A 2W Through Hole TO-220AB
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 400mA, 8A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 5V
Manufacturer:
ON Semiconductor
