Transistor Type:
PNP
Dimensions:
20.01 x 5.18 x 26.11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Collector Base Voltage:
260 V
Maximum Collector Emitter Voltage:
260 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-264
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 (Continuous) A, 25 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
5
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Base Part Number:
NJL1302
Detailed Description:
Bipolar (BJT) Transistor PNP + Diode (Isolated) 260V 15A 30MHz 200W Through Hole TO-264
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 5A, 5V
Transistor Type:
PNP + Diode (Isolated)
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 1A, 10A
Supplier Device Package:
TO-264
Voltage - Collector Emitter Breakdown (Max):
260V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-264-5
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
50µA (ICBO)
Manufacturer:
ON Semiconductor
