Transistor Type:
NPN
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204AA
Number of Elements per Chip:
1
Maximum DC Collector Current:
25 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
20 Weeks
Base Part Number:
2N5886
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 25A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10A, 4V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 6.25A, 25A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
25A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2N5886G. The transistor is a npn type. The given dimensions of the product include 39.37 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product has a maximum 2.5 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-204aa. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 25 a. It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. It has typical 20 weeks of manufacturer standard lead time. Base Part Number: 2n5886. It features bipolar (bjt) transistor npn 80v 25a 4mhz 200w through hole to-204 (to-3). Furthermore, 20 @ 10a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. The 4v @ 6.25a, 25a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 25a. In addition, 2ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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