Transistor Type:
NPN
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Collector Base Voltage:
250 V dc
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
34 Weeks
Base Part Number:
NJW0281
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W Through Hole TO-3P-3L
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 3A, 5V
Transistor Type:
NPN
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 500mA, 5A
Supplier Device Package:
TO-3P-3L
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
150W
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
