Nexperia USA Inc. PMZB370UNE,315
Product Information
Rds On (Max) @ Id, Vgs:
490mOhm @ 500mA, 4.5V
Detailed Description:
N-Channel 30V 900mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds:
78pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.05V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
1.16nC @ 15V
Supplier Device Package:
DFN1006B-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
3-XFDFN
Power Dissipation (Max):
360mW (Ta), 2.7W (Tc)
Current - Continuous Drain (Id) @ 25°C:
900mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Nexperia USA Inc.
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You can order Nexperia USA Inc. brand products with PMZB370UNE,315 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship PMZB370UNE,315 Internationally to many countries around the world.
This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMZB370UNE,315. It has a maximum Rds On and voltage of 490mohm @ 500ma, 4.5v. It features n-channel 30v 900ma (ta) 360mw (ta), 2.7w (tc) surface mount dfn1006b-3. The product's input capacitance at maximum includes 78pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.05v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 1.16nc @ 15v. dfn1006b-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 3-xfdfn. The product carries maximum power dissipation 360mw (ta), 2.7w (tc). The continuous current drain at 25°C is 900ma (ta). This product use mosfet (metal oxide) technology. The nexperia usa inc.'s product offers user-desired applications.
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