ON Semiconductor MJD253-1G

ON Semiconductor

Product Information

Dimensions:
6.73 x 6.35 x 2.38mm
Maximum Collector Emitter Saturation Voltage:
0.6 V dc
Width:
6.35mm
Transistor Configuration:
Single
Maximum Operating Frequency:
10 MHz
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
100 V dc
Maximum Base Emitter Saturation Voltage:
1.8 V dc
Maximum Emitter Base Voltage:
7 V
Length:
6.73mm
Maximum DC Collector Current:
4 A
Pin Count:
3
Minimum DC Current Gain:
15
Mounting Type:
Through Hole
Maximum Power Dissipation:
12.5 W
Maximum Collector Emitter Voltage:
100 V
Height:
2.38mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
MJD253
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 1V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.4W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD253-1G. The given dimensions of the product include 6.73 x 6.35 x 2.38mm. The product has a maximum 0.6 v dc collector emitter saturation voltage . Furthermore, the product is 6.35mm wide. The product offers single transistor configuration. It carries 10 mhz of maximum operating frequency. The package is a sort of ipak (to-251). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 100 v dc maximum collector base voltage. In addition, the product has a maximum 1.8 v dc base emitter saturation voltage . It features a 7 v of maximum emitter base voltage. Its accurate length is 6.73mm. Moreover, it has a maximum DC collector current of 4 a. It contains 3 pins. It features up to 15 of minimum DC current gain. The product is available in through hole configuration. Provides up to 12.5 w maximum power dissipation. Whereas features a 100 v of collector emitter voltage (max). In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -65 °c. It has typical 8 weeks of manufacturer standard lead time. Base Part Number: mjd253. It features bipolar (bjt) transistor pnp 100v 4a 40mhz 1.4w through hole i-pak. Furthermore, 40 @ 200ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 40mhz. The 600mv @ 100ma, 1a is the maximum Vce saturation. i-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.4w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 4a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Devices 29/Aug/2017(PCN Assembly/Origin)
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MJD243,253(Datasheets)

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FAQs

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You can order ON Semiconductor brand products with MJD253-1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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