Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Collector Base Voltage:
80 V dc
Maximum Collector Emitter Voltage:
80 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Base Part Number:
MJE802
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-225
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Supplier Device Package:
TO-225
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
