ON Semiconductor 2SB1121T-TD-E
Product Information
Minimum DC Current Gain:
140
Transistor Type:
PNP
Dimensions:
4.5 x 2.5 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.3 W
Maximum Collector Emitter Saturation Voltage:
-0.6 V
Maximum Collector Base Voltage:
-30 V
Maximum Collector Emitter Voltage:
25 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Maximum Operating Frequency:
150 MHz
Height:
1.5mm
Width:
2.5mm
Length:
4.5mm
Package Type:
PCP
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Emitter Base Voltage:
-6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SB1121
Detailed Description:
Bipolar (BJT) Transistor PNP 25V 2A 150MHz 500mW Surface Mount PCP
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 2V
Transistor Type:
PNP
Frequency - Transition:
150MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 75mA, 1.5A
Series:
*
Supplier Device Package:
PCP
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-243AA
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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You can order ON Semiconductor brand products with 2SB1121T-TD-E directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor 2SB1121T-TD-E. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor 2SB1121T-TD-E.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11226391 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11226391.
Yes. We ship 2SB1121T-TD-E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2SB1121T-TD-E. It features up to 140 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 4.5 x 2.5 x 1.5mm. The product is available in surface mount configuration. Provides up to 1.3 w maximum power dissipation. The product has a maximum -0.6 v collector emitter saturation voltage . Additionally, it has -30 v maximum collector base voltage. Whereas features a 25 v of collector emitter voltage (max). In addition, the product has a maximum -1.2 v base emitter saturation voltage . It carries 150 mhz of maximum operating frequency. In addition, the height is 1.5mm. Furthermore, the product is 2.5mm wide. Its accurate length is 4.5mm. The package is a sort of pcp. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 2 a. It features a -6 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 2sb1121. It features bipolar (bjt) transistor pnp 25v 2a 150mhz 500mw surface mount pcp. Furthermore, 100 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 150mhz. The 600mv @ 75ma, 1.5a is the maximum Vce saturation. pcp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 500mw. Moreover, the product comes in to-243aa. The maximum collector current includes 2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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