Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW, 300 mW, 350 mW
Maximum Collector Emitter Saturation Voltage:
-1.6 V dc
Maximum Collector Base Voltage:
-60 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-2.6 V dc
Maximum Emitter Base Voltage:
-5 V dc
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
MMBT2907
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 300mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
PNP
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
