ON Semiconductor TIP35AG
Product Information
Minimum DC Current Gain:
15
Transistor Type:
NPN
Dimensions:
15.2 x 4.9 x 20.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Continuous Collector Current:
25 A
Maximum Collector Emitter Voltage:
60 V dc
Height:
20.35mm
Width:
4.9mm
Length:
15.2mm
Package Type:
SOT-93
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP35
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 25A 3MHz 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 15A, 4V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 5A, 25A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
25A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11190714 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11190714.
Yes. We ship TIP35AG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is TIP35AG. It features up to 15 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 15.2 x 4.9 x 20.35mm. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. The product has a maximum 25 a continuous collector current . Whereas features a 60 v dc of collector emitter voltage (max). In addition, the height is 20.35mm. Furthermore, the product is 4.9mm wide. Its accurate length is 15.2mm. The package is a sort of sot-93. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 4 v dc collector emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: tip35. It features bipolar (bjt) transistor npn 60v 25a 3mhz 125w through hole to-247. Furthermore, 15 @ 15a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 4v @ 5a, 25a is the maximum Vce saturation. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 125w. Moreover, the product comes in to-247-3. The maximum collector current includes 25a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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