Transistor Type:
PNP
Dimensions:
15.2 x 4.9 x 20.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
160 W
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-218
Number of Elements per Chip:
1
Maximum DC Collector Current:
20 (Continuous) A, 40 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
43 Weeks
Base Part Number:
MJH6287
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 20A 4MHz 160W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 10A, 3V
Transistor Type:
PNP - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 200mA, 20A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
160W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
20A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
