Transistor Type:
PNP
Dimensions:
15.2 x 4.9 x 20.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
160 W
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-218
Number of Elements per Chip:
1
Maximum DC Collector Current:
20 (Continuous) A, 40 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
43 Weeks
Base Part Number:
MJH6287
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 20A 4MHz 160W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 10A, 3V
Transistor Type:
PNP - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 200mA, 20A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
160W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
20A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MJH6287G. The transistor is a pnp type. The given dimensions of the product include 15.2 x 4.9 x 20.35mm. The product is available in through hole configuration. Provides up to 160 w maximum power dissipation. The product has a maximum 3 v dc collector emitter saturation voltage . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 4 v dc base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-218. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 20 (continuous) a, 40 (peak) a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 43 weeks of manufacturer standard lead time. Base Part Number: mjh6287. It features bipolar (bjt) transistor pnp - darlington 100v 20a 4mhz 160w through hole to-247. Furthermore, 750 @ 10a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The transition frequency of the product is 4mhz. The 3v @ 200ma, 20a is the maximum Vce saturation. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 160w. Moreover, the product comes in to-247-3. The maximum collector current includes 20a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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