Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.8 W
Maximum Collector Emitter Saturation Voltage:
3.5 V
Maximum Collector Base Voltage:
90 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
5 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
2N6488
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 15A 5MHz 1.8W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 5A, 4V
Transistor Type:
NPN
Frequency - Transition:
5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 5A, 15A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.8W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
