Dimensions:
10.28 x 4.82 x 15.75mm
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Collector Cut-off Current:
2mA
Width:
4.82mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
2 A
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Maximum Emitter Base Voltage:
5 V
Length:
10.28mm
Pin Count:
3
Minimum DC Current Gain:
500
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Voltage:
100 V
Height:
15.75mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP112
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 2W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 1A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 8mA, 2A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
