Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Saturation Voltage:
0.5 V dc
Maximum Collector Base Voltage:
350 V dc
Maximum Collector Emitter Voltage:
350 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 (Continuous) A, 8 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Base Part Number:
MJE15034
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 4A 30MHz 2W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 2A, 5V
Transistor Type:
NPN
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
