Transistor Type:
NPN
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Maximum Collector Emitter Saturation Voltage:
2 V dc
Maximum Collector Base Voltage:
1000 V dc
Maximum Collector Emitter Voltage:
450 V
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum DC Collector Current:
30 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
48 Weeks
Base Part Number:
MJW18020
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 30A 13MHz 250W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 3A, 5V
Transistor Type:
NPN
Frequency - Transition:
13MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 4A, 20A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
250W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
30A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
