Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW, 300 mW
Maximum Collector Emitter Saturation Voltage:
-0.25 V
Maximum Collector Base Voltage:
-60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-4 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
46 Weeks
Base Part Number:
MMBTA55
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
Transistor Type:
PNP
Frequency - Transition:
50MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
