ON Semiconductor MJF18008G

MJF18008G ON Semiconductor
MJF18008G
MJF18008G
ET11106898
ET11106898
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
MJF18008G ON SemiconductorON Semiconductor
MJF18008G ON SemiconductorON Semiconductor
ON Semiconductor

Product Information

Dimensions:
10.63 x 4.9 x 16.12mm
Maximum Collector Emitter Saturation Voltage:
0.8 V dc
Width:
4.9mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
10 V dc
Maximum Base Emitter Saturation Voltage:
1.25 V dc
Maximum Emitter Base Voltage:
9 V
Length:
10.63mm
Maximum DC Collector Current:
8 A
Pin Count:
3
Minimum DC Current Gain:
10
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Voltage:
450 V
Height:
16.12mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
MJF18008
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 8A 13MHz 45W Through Hole TO-220FP
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 1A, 5V
Transistor Type:
NPN
Frequency - Transition:
13MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 900mA, 4.5V
Series:
SWITCHMODE™
Supplier Device Package:
TO-220FP
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
45W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MJF18008G. The given dimensions of the product include 10.63 x 4.9 x 16.12mm. The product has a maximum 0.8 v dc collector emitter saturation voltage . Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It carries 1 mhz of maximum operating frequency. The package is a sort of to-220fp. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 10 v dc maximum collector base voltage. In addition, the product has a maximum 1.25 v dc base emitter saturation voltage . It features a 9 v of maximum emitter base voltage. Its accurate length is 10.63mm. Moreover, it has a maximum DC collector current of 8 a. It contains 3 pins. It features up to 10 of minimum DC current gain. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. Whereas features a 450 v of collector emitter voltage (max). In addition, the height is 16.12mm. Whereas, the minimum operating temperature of the product is -65 °c. It has typical 8 weeks of manufacturer standard lead time. Base Part Number: mjf18008. It features bipolar (bjt) transistor npn 450v 8a 13mhz 45w through hole to-220fp. Furthermore, 14 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 13mhz. The 700mv @ 900ma, 4.5v is the maximum Vce saturation. The product switchmode™, is a highly preferred choice for users. to-220fp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 450v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 45w. Moreover, the product comes in to-220-3 full pack. The maximum collector current includes 8a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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Mold compound change 17/Apr/2020(PCN Assembly/Origin)
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MJE18008, MJF18008(Datasheets)

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