ON Semiconductor MMBT6427LT1G
Product Information
Dimensions:
3.04 x 1.4 x 1.01mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Cut-off Current:
50nA
Width:
1.4mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
500 mA
Package Type:
SOT-23
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
12 V
Length:
3.04mm
Pin Count:
3
Minimum DC Current Gain:
10000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
40 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
35 Weeks
Base Part Number:
MMBT6427
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500µA, 500mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship MMBT6427LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MMBT6427LT1G. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product has a maximum 1.5 v collector emitter saturation voltage . It has a maximum 50na collector cut-off current . Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. The product has a maximum 500 ma continuous collector current . The package is a sort of sot-23. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 40 v maximum collector base voltage. In addition, the product has a maximum 2 v base emitter saturation voltage . It features a 12 v of maximum emitter base voltage. Its accurate length is 3.04mm. It contains 3 pins. It features up to 10000 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Whereas features a 40 v of collector emitter voltage (max). In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 35 weeks of manufacturer standard lead time. Base Part Number: mmbt6427. It features bipolar (bjt) transistor npn - darlington 40v 500ma 225mw surface mount sot-23-3 (to-236). Furthermore, 20000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The 1.5v @ 500µa, 500ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 500ma. In addition, 1µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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