Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
540 mW
Maximum Continuous Collector Current:
2 A
Maximum Collector Emitter Voltage:
12 V dc
Maximum Base Emitter Saturation Voltage:
0.9 V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.09 V
Maximum Emitter Base Voltage:
6 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
43 Weeks
Base Part Number:
NSS12201
Detailed Description:
Bipolar (BJT) Transistor NPN 12V 2A 150MHz 460mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
150MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
90mV @ 200mA, 2A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
460mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
