ON Semiconductor 2SC4134T-E

ON Semiconductor

Product Information

Base Part Number:
2SC4134
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW Through Hole TP
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 5V
Transistor Type:
NPN
Frequency - Transition:
120MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 40mA, 400mA
Supplier Device Package:
TP
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SC4134T-E. Base Part Number: 2sc4134. It features bipolar (bjt) transistor npn 100v 1a 120mhz 800mw through hole tp. Furthermore, 200 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 120mhz. The product is available in through hole configuration. The 400mv @ 40ma, 400ma is the maximum Vce saturation. tp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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2SC4134(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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