Transistor Type:
NPN
Dimensions:
6.73 x 2.38 x 6.22mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Collector Emitter Voltage:
80 V dc
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
DPAK
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3+Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
MJD44
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
NPN
Frequency - Transition:
85MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MJD44H11-1G. The transistor is a npn type. The given dimensions of the product include 6.73 x 2.38 x 6.22mm. The product is available in surface mount configuration. Provides up to 20 w maximum power dissipation. The product has a maximum 1 v dc collector emitter saturation voltage . Whereas features a 80 v dc of collector emitter voltage (max). In addition, the product has a maximum 1.5 v dc base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 5 v dc of maximum emitter base voltage. The package is a sort of dpak. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 8 a. It has a maximum operating temperature of +150 °c. It contains 3+tab pins. The product offers single transistor configuration. It has typical 51 weeks of manufacturer standard lead time. Base Part Number: mjd44. It features bipolar (bjt) transistor npn 80v 8a 85mhz 1.75w through hole i-pak. Furthermore, 40 @ 4a, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 85mhz. The product is available in through hole configuration. The 1v @ 400ma, 8a is the maximum Vce saturation. i-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 8a. In addition, 1µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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