Transistor Type:
NPN
Dimensions:
6.73 x 2.38 x 6.22mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Collector Emitter Voltage:
80 V dc
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
DPAK
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3+Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
MJD44
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
NPN
Frequency - Transition:
85MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
