Dimensions:
6.5 x 2.3 x 5.5mm
Maximum Collector Emitter Saturation Voltage:
-550 mV
Width:
2.3mm
Transistor Configuration:
Single
Maximum Operating Frequency:
130 MHz
Package Type:
TP-FA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-60 V
Maximum Base Emitter Saturation Voltage:
-1.3 V
Maximum Emitter Base Voltage:
-6 V
Length:
6.5mm
Maximum DC Collector Current:
5 A
Pin Count:
3
Minimum DC Current Gain:
70
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
50 V
Height:
5.5mm
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2SB1203
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Surface Mount 2-TP-FA
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
130MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
550mV @ 150mA, 3A
Supplier Device Package:
2-TP-FA
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
