ON Semiconductor SMMBT4401LT1G
Product Information
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.75 V dc
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
1.2 V dc
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Base Part Number:
SMMBT4401
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23-3 (TO-236)
Transistor Type:
NPN
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 1V
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11023749 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11023749.
Yes. We ship SMMBT4401LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is SMMBT4401LT1G. The transistor is a npn type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. The product has a maximum 0.75 v dc collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). In addition, the product has a maximum 1.2 v dc base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 600 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 50 weeks of manufacturer standard lead time. Base Part Number: smmbt4401. It features bipolar (bjt) transistor npn 40v 600ma 250mhz 300mw surface mount sot-23-3 (to-236). The transition frequency of the product is 250mhz. The 750mv @ 50ma, 500ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 600ma. Furthermore, 100 @ 150ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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