ON Semiconductor MJ11015G
Product Information
Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
30 A
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
5 V
Height:
8.51mm
Width:
26.67mm
Length:
39.37mm
Package Type:
TO-204
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+200 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
44 Weeks
Base Part Number:
MJ11015
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 20A, 5V
Transistor Type:
PNP - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 300mA, 30A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Tray
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
30A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship MJ11015G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MJ11015G. It features up to 200 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 39.37 x 26.67 x 8.51mm. The product is available in through hole configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 30 a continuous collector current . Additionally, it has 120 v maximum collector base voltage. Whereas features a 120 v of collector emitter voltage (max). In addition, the product has a maximum 5 v base emitter saturation voltage . In addition, the height is 8.51mm. Furthermore, the product is 26.67mm wide. Its accurate length is 39.37mm. The package is a sort of to-204. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 4 v collector emitter saturation voltage . It has a maximum operating temperature of +200 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 44 weeks of manufacturer standard lead time. Base Part Number: mj11015. It features bipolar (bjt) transistor pnp - darlington 120v 30a 4mhz 200w through hole to-204 (to-3). Furthermore, 1000 @ 20a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The transition frequency of the product is 4mhz. The 4v @ 300ma, 30a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, tray is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 30a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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