Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
150 V
Maximum Collector Emitter Voltage:
150 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
11 Weeks
Base Part Number:
MJE15030
Detailed Description:
Bipolar (BJT) Transistor NPN 150V 8A 30MHz 50W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 2V
Transistor Type:
NPN
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
150V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
50W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
