Dimensions:
3.04 x 2.64 x 1.11mm
Maximum Collector Emitter Saturation Voltage:
0.2 V
Width:
2.64mm
Transistor Configuration:
Single
Maximum Operating Frequency:
100 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
50 V dc
Maximum Base Emitter Saturation Voltage:
1.1 V
Maximum Emitter Base Voltage:
5 V
Length:
3.04mm
Maximum DC Collector Current:
1 A
Pin Count:
3
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Voltage:
30 V
Height:
1.11mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
20 Weeks
Base Part Number:
MMBT489
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 1A 100MHz 710mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 500mA, 5V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
200mV @ 100mA, 1A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
710mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
