ON Semiconductor MJD112T4G
Product Information
Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
0.02mA
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
18 Weeks
Base Part Number:
MJD11
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
Transistor Type:
NPN - Darlington
Frequency - Transition:
25MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
20µA
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship MJD112T4G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MJD112T4G. It features up to 200 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 6.73 x 6.22 x 2.38mm. The product is available in surface mount configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 4 a continuous collector current . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 4 v base emitter saturation voltage . It has a maximum 0.02ma collector cut-off current . In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 3 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 18 weeks of manufacturer standard lead time. Base Part Number: mjd11. It features bipolar (bjt) transistor npn - darlington 100v 2a 25mhz 20w surface mount dpak. Furthermore, 1000 @ 2a, 3v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 25mhz. The 3v @ 40ma, 4a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 20w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 2a. In addition, 20µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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