Minimum DC Current Gain:
5
Transistor Type:
PNP
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Continuous Collector Current:
4 A
Maximum Collector Emitter Voltage:
60 V dc
Maximum Base Emitter Saturation Voltage:
2 V dc
Height:
11.1mm
Width:
3mm
Length:
7.8mm
Package Type:
TO-225
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
2.5 V dc
Maximum Emitter Base Voltage:
6 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BD788
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 4A 50MHz 15W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 3V
Transistor Type:
PNP
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 800mA, 4A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
15W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
