Minimum DC Current Gain:
750
Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Emitter Voltage:
80 V dc
Maximum Base Emitter Saturation Voltage:
2.5 V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BDX54
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 80V 8A 65W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 3A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 12mA, 3A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
65W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is BDX54BG. It features up to 750 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.53 x 4.83 x 9.28mm. The product is available in through hole configuration. Provides up to 65 w maximum power dissipation. The product has a maximum 8 a continuous collector current . Whereas features a 80 v dc of collector emitter voltage (max). In addition, the product has a maximum 2.5 v dc base emitter saturation voltage . In addition, the height is 9.28mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.53mm. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 4 v dc collector emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: bdx54. It features bipolar (bjt) transistor pnp - darlington 80v 8a 65w through hole to-220ab. Furthermore, 750 @ 3a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The 2v @ 12ma, 3a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 65w. Moreover, the product comes in to-220-3. The maximum collector current includes 8a. In addition, 500µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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