Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
1.4 V dc
Maximum Collector Base Voltage:
80 V dc
Maximum Collector Emitter Voltage:
80 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
31 Weeks
Base Part Number:
2N5192
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 4A 2MHz 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 1.5A, 2V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 1A, 4A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
