Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW, 300 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
0.8 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
4.5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
MMBT5088
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 300mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 100µA, 5V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 1mA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
