ON Semiconductor MJD42C1G

ON Semiconductor

Product Information

Automotive Standard:
AEC-Q101
Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
6.73 x 2.38 x 6.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Continuous Collector Current:
6 A
Maximum Collector Emitter Voltage:
100 V dc
Height:
6.35mm
Width:
2.38mm
Length:
6.73mm
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJD42
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 3A, 4V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 600mA, 6A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD42C1G. The product complies with automotive standard - aec-q101. It features up to 15 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 6.73 x 2.38 x 6.35mm. The product is available in through hole configuration. Provides up to 20 w maximum power dissipation. The product has a maximum 6 a continuous collector current . Whereas features a 100 v dc of collector emitter voltage (max). In addition, the height is 6.35mm. Furthermore, the product is 2.38mm wide. Its accurate length is 6.73mm. The package is a sort of ipak. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 1.5 v dc collector emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mjd42. It features bipolar (bjt) transistor pnp 100v 6a 3mhz 1.75w through hole i-pak. Furthermore, 15 @ 3a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 1.5v @ 600ma, 6a is the maximum Vce saturation. i-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 6a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet MJD42C1G(Technical Reference)
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Mult Devices 29/Aug/2017(PCN Assembly/Origin)
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MJD41C, MJD42C(Datasheets)

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