Automotive Standard:
AEC-Q101
Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
6.73 x 2.38 x 6.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Continuous Collector Current:
6 A
Maximum Collector Emitter Voltage:
100 V dc
Height:
6.35mm
Width:
2.38mm
Length:
6.73mm
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJD42
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 3A, 4V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 600mA, 6A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor