Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
6.5 x 5.5 x 2.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
-240 mV
Maximum Collector Base Voltage:
-100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Maximum Operating Frequency:
1 MHz
Height:
2.3mm
Width:
5.5mm
Length:
6.5mm
Package Type:
TP-FA
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Emitter Base Voltage:
-7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Base Part Number:
2SA2205
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 2A 300MHz 800mW Surface Mount 2-TP-FA
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 5V
Transistor Type:
PNP
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
240mV @ 100mA, 1A
Supplier Device Package:
2-TP-FA
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
