Microsemi Corporation 2N5680
Product Information
Manufacturer Standard Lead Time:
26 Weeks
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor PNP 120V 1A 1W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 250mA, 2V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-205AD, TO-39-3 Metal Can
Current - Collector Cutoff (Max):
10µA
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET10886082. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N5680 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N5680. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N5680.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10886082 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10886082.
Yes. We ship 2N5680 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N5680. It has typical 26 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 120v 1a 1w through hole to-39 (to-205ad). Furthermore, 40 @ 250ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-205ad, to-39-3 metal can. In addition, 10µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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