ON Semiconductor BC858BLT1G
Product Information
Transistor Type:
PNP
Dimensions:
0.94 x 2.9 x 1.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Saturation Voltage:
0.65 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
BC858
Detailed Description:
Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship BC858BLT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BC858BLT1G. The transistor is a pnp type. The given dimensions of the product include 0.94 x 2.9 x 1.3mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. The product has a maximum 0.65 v collector emitter saturation voltage . Additionally, it has 30 v maximum collector base voltage. Whereas features a 30 v of collector emitter voltage (max). In addition, the product has a maximum 0.9 v base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: bc858. It features bipolar (bjt) transistor pnp 30v 100ma 100mhz 300mw surface mount. Furthermore, 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 650mv @ 5ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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