Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Collector Emitter Saturation Voltage:
0.75 V
Maximum Collector Emitter Voltage:
450 V
Maximum Base Emitter Saturation Voltage:
1.25 V
Maximum Operating Frequency:
13 MHz
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJE18004
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 300mA, 5V
Transistor Type:
NPN
Frequency - Transition:
13MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 500mA, 2.5A
Series:
SWITCHMODE™
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
75W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MJE18004G. The transistor is a npn type. The given dimensions of the product include 9.28 x 10.28 x 4.82mm. The product is available in through hole configuration. The product has a maximum 0.75 v collector emitter saturation voltage . Whereas features a 450 v of collector emitter voltage (max). In addition, the product has a maximum 1.25 v base emitter saturation voltage . It carries 13 mhz of maximum operating frequency. It features a 9 v of maximum emitter base voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 5 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mje18004. It features bipolar (bjt) transistor npn 450v 5a 13mhz 75w through hole to-220ab. Furthermore, 14 @ 300ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 13mhz. The 750mv @ 500ma, 2.5a is the maximum Vce saturation. The product switchmode™, is a highly preferred choice for users. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 450v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 75w. Moreover, the product comes in to-220-3. The maximum collector current includes 5a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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