ON Semiconductor NSS60200LT1G
Product Information
Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
540 mW
Maximum Collector Emitter Saturation Voltage:
-0.03 V
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-7 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
NSS602
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 2A 100MHz 460mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
220mV @ 200mA, 2A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
460mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship NSS60200LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSS60200LT1G. The transistor is a pnp type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 540 mw maximum power dissipation. The product has a maximum -0.03 v collector emitter saturation voltage . Additionally, it has -80 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum -0.9 v base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a -7 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 2 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 15 weeks of manufacturer standard lead time. Base Part Number: nss602. It features bipolar (bjt) transistor pnp 60v 2a 100mhz 460mw surface mount sot-23-3 (to-236). Furthermore, 150 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 220mv @ 200ma, 2a is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 460mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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