Microsemi Corporation JAN2N3019S
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 500mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Series:
Military, MIL-PRF-19500/391
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
800mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10nA
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET10629383. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N3019S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N3019S. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N3019S.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10629383 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10629383.
Yes. We ship JAN2N3019S Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3019S. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 80v 1a 800mw through hole to-39. Furthermore, 50 @ 500ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/391, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10na is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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