Microsemi Corporation JAN2N3501UB
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
300mA
Detailed Description:
Bipolar (BJT) Transistor NPN 150V 300mA 500mW Surface Mount UB
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 15mA, 150mA
Series:
Military, MIL-PRF-19500/366
Package / Case:
3-SMD, No Lead
Supplier Device Package:
UB
Voltage - Collector Emitter Breakdown (Max):
150V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
500mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET10616754. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N3501UB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N3501UB. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N3501UB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10616754 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10616754.
Yes. We ship JAN2N3501UB Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3501UB. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 300ma. It features bipolar (bjt) transistor npn 150v 300ma 500mw surface mount ub. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in surface mount configuration. The 400mv @ 15ma, 150ma is the maximum Vce saturation. The product military, mil-prf-19500/366, is a highly preferred choice for users. Moreover, the product comes in 3-smd, no lead. ub is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 150v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 500mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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