Microsemi Corporation JAN2N6058
Product Information
Manufacturer Standard Lead Time:
22 Weeks
Current - Collector (Ic) (Max):
12A
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 12A 150W Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 6A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 120mA, 12A
Series:
Military, MIL-PRF-19500/502
Package / Case:
TO-3
Supplier Device Package:
Out of Bounds
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 175°C (TJ)
Power - Max:
150W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
1mA
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET10607013. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N6058 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N6058. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N6058.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10607013 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10607013.
Yes. We ship JAN2N6058 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N6058. It has typical 22 weeks of manufacturer standard lead time. The maximum collector current includes 12a. It features bipolar (bjt) transistor npn - darlington 80v 12a 150w through hole. Furthermore, 1000 @ 6a, 3v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The product is available in through hole configuration. The 3v @ 120ma, 12a is the maximum Vce saturation. The product military, mil-prf-19500/502, is a highly preferred choice for users. Moreover, the product comes in to-3. out of bounds is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 150w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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