Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
10A
Detailed Description:
Bipolar (BJT) Transistor NPN 120V 10A 1W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 5A, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 1A, 10A
Series:
Military, MIL-PRF-19500/394
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N5237S. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 10a. It features bipolar (bjt) transistor npn 120v 10a 1w through hole to-39 (to-205ad). Furthermore, 40 @ 5a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 2.5v @ 1a, 10a is the maximum Vce saturation. The product military, mil-prf-19500/394, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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