Microsemi Corporation JAN2N4449
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector Cutoff (Max):
400nA
Detailed Description:
Bipolar (BJT) Transistor NPN 20V 360mW Through Hole
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
450mV @ 10mA, 100mA
Series:
Military, MIL-PRF-19500/317
Package / Case:
TO-206AB, TO-46-3 Metal Can
Supplier Device Package:
Out of Bounds
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
360mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 100mA, 1V
Manufacturer:
Microsemi Corporation
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FAQs
Yes. You can also search JAN2N4449 on website for other similar products.
We accept all major payment methods for all products including ET10330654. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N4449 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N4449. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N4449.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10330654 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10330654.
Yes. We ship JAN2N4449 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N4449. It has typical 30 weeks of manufacturer standard lead time. In addition, 400na is the maximum current at collector cutoff. It features bipolar (bjt) transistor npn 20v 360mw through hole. The transistor is a npn type. The product is available in through hole configuration. The 450mv @ 10ma, 100ma is the maximum Vce saturation. The product military, mil-prf-19500/317, is a highly preferred choice for users. Moreover, the product comes in to-206ab, to-46-3 metal can. out of bounds is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. Furthermore, 20 @ 100ma, 1v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
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