Microsemi Corporation 2N4261UB
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
30mA
Detailed Description:
Bipolar (BJT) Transistor PNP 15V 30mA 200mW Surface Mount UB
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 1V
Transistor Type:
PNP
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
350mV @ 1mA, 10mA
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package:
UB
Voltage - Collector Emitter Breakdown (Max):
15V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
200mW
Customer Reference:
Package / Case:
3-SMD, No Lead
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
Yes. You can also search 2N4261UB on website for other similar products.
We accept all major payment methods for all products including ET10326105. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N4261UB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N4261UB. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N4261UB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10326105 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10326105.
Yes. We ship 2N4261UB Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N4261UB. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 30ma. It features bipolar (bjt) transistor pnp 15v 30ma 200mw surface mount ub. Furthermore, 30 @ 10ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in surface mount configuration. The 350mv @ 1ma, 10ma is the maximum Vce saturation. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. ub is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 15v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200mw. Moreover, the product comes in 3-smd, no lead. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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