Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
500mA
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 500mA 3W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
5V @ 15mA, 150mA
Series:
Military, MIL-PRF-19500/182
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
3W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N1893S. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 500ma. It features bipolar (bjt) transistor npn 80v 500ma 3w through hole to-39 (to-205ad). Furthermore, 40 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 5v @ 15ma, 150ma is the maximum Vce saturation. The product military, mil-prf-19500/182, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 3w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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